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| savantic semiconductor product specification silicon npn power transistors 2SD1535 d escription with to-220fa package wide area of safe operation high breakdown voltage darlington applications for high power amplification pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector -emitter voltage open base 400 v v ebo emitter-base voltage open collector 12 v i c collector current 7 a i cm collector current-peak 14 a i b base current 0.5 a t c =25 50 p c collector power dissipation t a =25 2.0 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1535 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; r bz = > ,l=25mh 400 v v cesat collector-emitter saturation voltage i c =7a ; i b =70ma 2.0 v v besat base-emitter saturation voltage i c =7a ; i b =70ma 2.5 v i cbo collector cut-off current v cb =500v; i e =0 0.1 ma i ceo collector cut-off current v ce =400v; i b =0 0.1 ma i ebo emitter cut-off current v eb =12v; i c =0 100 ma h fe-1 dc current gain i c =2a ; v ce =2v 500 h fe-2 dc current gain i c =6a ; v ce =2v 200 f t transition frequency i c =0.5a ; v ce =10v;f=1mhz 20 mhz switching times t on turn-on time 1.5 s t stg storage time 5.0 s t f fall time i c =7a ; i b1 =-i b2 =70ma v cc =300v 6.5 s savantic semiconductor product specification 3 silicon npn power transistors 2SD1535 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
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